Intel、美光宣布全球最先进20nm闪存工艺-快科技-科技改变生活

Intel、美光宣布全球最先进20nm闪存工艺

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2011年04月15日 09:09
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虽然25nm NAND工艺进展不顺，但技术前进的脚步永远不会停歇，Intel、美光今天又联合宣布了最先进的20nm工艺。

20nm工艺依然由Intel、美光联合投资的IM Flash Technologies(IMFT)负责制造，可以生产出容量达64Gb(或者说8GB)的MLC NAND闪存颗粒，而且核心面积仅仅118平方毫米，相比25nm 8GB NAND闪存减小30-40％。

Intel宣称，闪存工艺从25nm进步到20nm之后，所能提供的容量可比现有34nm工艺增加大约50％，同时20nm工艺闪存颗粒的性能和耐用性仍会维持在与25nm类似的水平上。

IMFT 20nm 8GB NAND闪存颗粒已经试产，预计2011年下半年投入量产。届时，Intel、美光将会一方面拿出容量翻番的16GB颗粒，另一方面公布面积跟一张邮票差不多大小的128GB固态硬盘。

IMFT 20nm 64Gb NAND闪存颗粒

两个34nm 32Gb与单个25/20nm 64Gb NAND闪存颗粒对比

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