Intel、美光宣布量产34nm NAND闪存-快科技-科技改变生活

Intel、美光宣布量产34nm NAND闪存

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2008年11月25日 01:53
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Intel和美光今天宣布，双方联合研发的34nm工艺NAND闪存芯片已经投入量产，这也是业界第一款40nm工艺以下的NAND闪存产品。

这种MLC多层型NAND闪存芯片由Intel、美光联合投资的IM Flash Technologies生产，切割自300毫米晶圆，核心面积172平方毫米，在同类产品中是最小的。该芯片容量32Gb，一块晶圆可以换来大约1.6TB的合计容量，另外通过标准的48引脚TSOP封装，还可以将这种芯片做成更大容量的NAND闪存设备，比如两个八裸片封装就能实现64GB。

Intel表示，这种34nm 32Gb NAND闪存芯片是专为固态硬盘设计的，能带来更大的容量、更小的体积、更低的价格。

该芯片样品于今年6月份供货，如今得以提前投入大批量生产。

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