STMicro获三星OneNAND闪存授权-快科技-科技改变生活

STMicro获三星OneNAND闪存授权

ZNXF
2006年10月24日 09:22
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三星近日宣布STMicroelectronics已经获得了该公司最先进的闪存封装技术OneNAND的授权。OneNAND架构采用集成SRAM的NAND核心以及模仿NOR闪存界面的逻辑组件。

三星电子半导体事业部闪存解决方案小组高级副总裁Yun-Ho Choi指出：“三星欢迎STMicroelectronics支持OneNAND的决定，这种闪存持续发展能力强劲，且性能全球最高，”

STMicroelectronics获得三星OneNAND授权后，手机和其它平台设计师将可以在更广泛的移动应用中更容易地采用OneNAND。

根据协议，STMicroelectronics将在2007年初开始为三星OneNAND提供支持。

有趣的是，三星的官方新闻稿指出OneNAND的“写入”速度为10MB/s，这比60nm芯片之前预计的17MB/s要低，更接近90nm和70nm制程的9.3MB/s。

STMicro获三星OneNAND闪存授权

集成SRAM缓存和逻辑界面的单内存芯片

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